RSR025N03TL
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Краткое описание:
N-Channel MOSFET, 30V, 2.5A, 70mR Rds(on), SMT
Дополнительная информация
N-Channel Silicon Field-Effect Transistor (FET) for small signal applications. Features a 30V Drain to Source Breakdown Voltage and 2.5A Continuous Drain Current. Offers a low Drain-source On Resistance of 70mR (max) and 118mR (max). Operates with a Gate to Source Voltage up to 20V and a Threshold Voltage of 2.5V. Packaged in a TSMT3 (TO-236-3) surface-mount package, this RoHS compliant component has a maximum power dissipation of 1W and a wide operating temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 70mR |
| Nominal Vgs | 2.5V |
| Termination | SMD/SMT |
| Package/Case | TO-236-3 |
| Current Rating | 2.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 165pF |
| Power Dissipation | 1W |
| Threshold Voltage | 2.5V |
| Turn-On Delay Time | 6ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 830mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 118MR |
| Drain to Source Breakdown Voltage | 30V |
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