RSR025P03TL
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Краткое описание:
P-Channel JFET, 30V, 2.5A ID, 160mR Rds(on), TSMT3
Дополнительная информация
P-channel JFET, surface mount, TO-236-3 package. Features 2.5A continuous drain current (ID) and 30V drain-source breakdown voltage (Vdss). Offers low drain-source on-resistance (Rds On) up to 160mΩ. Operates from -55°C to 150°C with 1W power dissipation. Includes 10ns turn-on delay and 42ns turn-off delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 98mR |
| Package/Case | TO-236-3 |
| Current Rating | -2.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 1 |
| Input Capacitance | 460pF |
| Power Dissipation | 1W |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42ns |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 115mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 160MR |
| Drain to Source Breakdown Voltage | -30V |
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