RSR030N06TL
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Краткое описание:
N-Channel MOSFET, 60V, 3A, 85mR Rds(on), Surface Mount
Дополнительная информация
N-channel silicon Metal-oxide Semiconductor FET, a small signal field-effect transistor, features a 60V drain-to-source breakdown voltage and 3A continuous drain current. It offers a low drain-to-source resistance of 60mΩ and a maximum Rds On of 85mΩ. Operating across a temperature range of -55°C to 150°C, this 3-pin device in a TSMT3 package supports surface mount and through-hole mounting. Key switching characteristics include an 8ns turn-on delay and a 10ns fall time, with a maximum power dissipation of 1W.
| RoHS | Compliant |
| Mount | Surface Mount, Through Hole |
| Width | 1.8mm |
| Height | 0.95mm |
| Length | 3mm |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 85mR |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Input Capacitance | 380pF |
| Power Dissipation | 1W |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 540mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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