RTF015N03TL
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Краткое описание:
N-Channel JFET, 30V, 1.5A, 240mR Rds(on), SMD
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for small signal applications. Features a continuous drain current of 1.5A and a drain-to-source breakdown voltage of 30V. Offers a low drain-source on-resistance of 240mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 800mW. Packaged in a TUMT3, 3-pin SMD/SMT surface mount package, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 240mR |
| Package/Case | SMD/SMT |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 80pF |
| Power Dissipation | 800mW |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 800mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 240mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 240MR |
| Drain to Source Breakdown Voltage | 30V |
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