RTM002P02T2L
Снят с производства
Увеличить
Краткое описание:
P-Channel JFET, 20V, 200mA, 1.5R, SOT-723
Дополнительная информация
P-channel JFET for small signal applications. Features 200mA continuous drain current (ID) and a drain-source breakdown voltage of -20V. Offers a low drain-source on-resistance (Rds On) of 1.5 Ohms. Surface mountable in a SOT-723 package, this silicon FET boasts a 6ns fall time and 9ns turn-on delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.5R |
| Nominal Vgs | -700mV |
| Package/Case | SOT-723 |
| Current Rating | -200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 1 |
| Input Capacitance | 50pF |
| Power Dissipation | 150mW |
| Threshold Voltage | -700mV |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Drain to Source Resistance | 2R |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1.5R |
| Drain to Source Breakdown Voltage | -20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
