RU30105L
Краткое описание:
30 V 110 A N-Channel Power MOSFET in TO-252
Дополнительная информация
This device is an N-channel advanced power MOSFET rated for 30 V drain-source voltage and 110 A continuous drain current at 25°C case temperature. It is housed in a TO-252 package and is intended for high-frequency synchronous buck converters and DC-DC converters. The datasheet specifies 3.2 mΩ typical drain-source on-resistance at 10 V gate drive and 50 A drain current. It is 100% avalanche tested, supports a 175°C maximum junction temperature, and is offered in tape-and-reel packaging. The datasheet also identifies lead-free construction and RoHS-compliant availability.
| RoHS | Compliant |
| Lead Free | Yes |
| Gate Resistance | 1.5Ω |
| Transistor Type | N-Channel |
| Gate-Drain Charge | 12nC |
| Input Capacitance | 2980pF |
| Total Gate Charge | 30nC |
| Turn-On Rise Time | 26ns |
| Gate-Source Charge | 7nC |
| Output Capacitance | 595pF |
| Turn-Off Fall Time | 14ns |
| Turn-On Delay Time | 13ns |
| Gate-Source Voltage | ±20V |
| Turn-Off Delay Time | 24ns |
| Drain-Source Voltage | 30V |
| Pulsed Drain Current | 440A |
| Diode Forward Voltage | 1.2V |
| Reverse Recovery Time | 28ns |
| Reverse Recovery Charge | 26nC |
| Continuous Drain Current | 110A |
| Maximum Power Dissipation | 107W |
| Storage Temperature Range | -55 to 175°C |
| Drain-Source On-Resistance | 3.2 typ at VGS=10V, ID=50AmΩ |
| Maximum Junction Temperature | 175°C |
| Reverse Transfer Capacitance | 295pF |
| Single Pulse Avalanche Energy | 306mJ |
| Thermal Resistance Junction-to-Case | 1.4°C/W |
| Continuous Drain Current at Tc=100°C | 81A |
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