RU3075R
Краткое описание:
30 V 75 A N-Channel Power MOSFET in TO-220
Дополнительная информация
This device is an N-channel advanced power MOSFET rated for 30 V drain-source voltage and 75 A continuous current at 25 °C case temperature. It is housed in a TO-220 package and is intended for DC-DC converters and power supply applications. The datasheet specifies typical on-resistance of 5 mΩ at 10 V gate drive and 6.5 mΩ at 4.5 V gate drive. Maximum junction temperature is 175 °C, single-pulse avalanche energy is 81 mJ, and the device is described as lead-free and RoHS compliant.
| RoHS | Compliant |
| Transistor Type | N-Channel MOSFET |
| Gate-Drain Charge | 13 typnC |
| Input Capacitance | 2450 typpF |
| Total Gate Charge | 42 typnC |
| Turn-On Rise Time | 68 typns |
| Gate-Source Charge | 10 typnC |
| Output Capacitance | 490 typpF |
| Turn-Off Fall Time | 29 typns |
| Turn-On Delay Time | 15 typns |
| Gate-Source Voltage | ±20V |
| Turn-Off Delay Time | 36 typns |
| Drain-Source Voltage | 30V |
| Gate Leakage Current | ±100 maxnA |
| Pulsed Drain Current | 300A |
| Diode Forward Voltage | 1.2 maxV |
| Reverse Recovery Time | 27 typns |
| Gate Threshold Voltage | 1 to 2.5V |
| Reverse Recovery Charge | 16 typnC |
| Continuous Drain Current | 75A |
| On-Resistance at VGS=10V | 5 typmΩ |
| On-Resistance at VGS=4.5V | 6.5 typmΩ |
| Storage Temperature Range | -55 to 175°C |
| Power Dissipation at 25°C | 55W |
| Power Dissipation at 100°C | 28W |
| Reverse Transfer Capacitance | 240 typpF |
| Single Pulse Avalanche Energy | 81mJ |
| Operating Junction Temperature | 175 max°C |
| Continuous Drain Current at 100°C | 52A |
| Thermal Resistance Junction-to-Case | 2.7°C/W |
| Thermal Resistance Junction-to-Ambient | 62.5°C/W |