RUL035N02TR
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Краткое описание:
N-Channel FET, 20V, 3.5A ID, 31mR RDS(on), SMD
Дополнительная информация
N-channel silicon Metal-oxide Semiconductor FET designed for surface mount applications. Features a continuous drain current of 3.5A and a drain-to-source breakdown voltage of 20V. Offers a low drain-to-source on-resistance of 31mR at a gate-to-source voltage of 10V. This RoHS compliant component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. Packaged in a compact TUMT6, 6-pin SMD/SMT format on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 0.82mm |
| Length | 2.1mm |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 43mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 460pF |
| Power Dissipation | 1W |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 31mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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