RUM002N05T2L
Производится
Увеличить
Краткое описание:
N-Channel FET, 50V, 200mA, 2.2R Rds(on), SOT-723
Дополнительная информация
N-channel silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a 50V drain-to-source breakdown voltage and 200mA continuous drain current. Offers a low on-resistance of 2.2 Ohms and a maximum power dissipation of 150mW. Packaged in a SOT-723 surface-mount case, this component operates from -55°C to 150°C and is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.2R |
| Package/Case | SOT-723 |
| RoHS Compliant | Yes |
| Package Quantity | 8000 |
| Input Capacitance | 25pF |
| Power Dissipation | 150mW |
| Turn-On Delay Time | 4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.2R |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Voltage (Vdss) | 50V |
| Drain to Source Breakdown Voltage | 50V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
