P-channel JFET for small signal applications. Features a continuous drain current of -3A and a drain-source breakdown voltage of -12V. Offers a low drain-source on-resistance of 39mΩ. Operates within a temperature range of -55°C to 150°C. Packaged in a compact TUMT3 SMD/SMT package for surface mounting.
| RoHS |
Compliant |
| Mount |
Surface Mount |
| Width |
1.7mm |
| Height |
0.77mm |
| Length |
2mm |
| Polarity |
P-CHANNEL |
| Fall Time |
120ns |
| Lead Free |
Lead Free |
| Packaging |
Tape and Reel |
| Rds On Max |
39mR |
| Nominal Vgs |
-300mV |
| Package/Case |
SMD/SMT |
| RoHS Compliant |
Yes |
| Package Quantity |
1 |
| Input Capacitance |
1.86nF |
| Power Dissipation |
800mW |
| Threshold Voltage |
-300mV |
| Turn-On Delay Time |
9ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
210ns |
| Reach SVHC Compliant |
No |
| Max Power Dissipation |
800mW |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
28mR |
| Gate to Source Voltage (Vgs) |
10V |
| Continuous Drain Current (ID) |
-3A |
| Drain to Source Voltage (Vdss) |
12V |
| Drain-source On Resistance-Max |
39MR |
| Drain to Source Breakdown Voltage |
-12V |