SBC817-16LT3G

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SBC817-16LT3G - Onsemi
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Краткое описание: NPN BJT, 50V VCBO, 500mA Ic, 100MHz, SOT-23-3
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 45V collector-emitter breakdown voltage and 50V collector-base voltage. Offers a continuous collector current of 500mA and a saturation voltage of 700mV. Operates with a minimum hFE of 100 and a transition frequency of 100MHz. This component is RoHS compliant, halogen-free, and designed for automotive applications (AEC-Q101). Packaged in a 10000-piece tape and reel.
RoHS Compliant
Width 2.64mm
Height 1.11mm
Length 3.04mm
Series Automotive, AEC-Q101
hFE Min 100
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Max Frequency 100MHz
RoHS Compliant Yes
Package Quantity 10000
Power Dissipation 300mW
Radiation Hardening No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 500mA
Max Power Dissipation 300mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 45V
Continuous Collector Current 500mA
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 700mV
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 700mV

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