SBC817-25LT3G

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SBC817-25LT3G - Onsemi
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Краткое описание: NPN BJT 50V 500mA 100MHz SOT-23-3 Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor in a SOT-23-3 package. Features a 45V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a minimum hFE of 160 and a transition frequency of 100MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. This component is RoHS compliant and Halogen Free, supplied on a 10000-unit tape and reel.
RoHS Compliant
Width 2.64mm
Height 1.11mm
Length 3.04mm
hFE Min 160
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Max Frequency 100MHz
RoHS Compliant Yes
Package Quantity 10000
Power Dissipation 300mW
Radiation Hardening No
Transition Frequency 100MHz
Max Collector Current 500mA
Max Power Dissipation 300mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 45V
Continuous Collector Current 500mA
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 700mV
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 700mV

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