SBC846BLT1G

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SBC846BLT1G - Onsemi
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Краткое описание: NPN BJT, 65V VCEO, 100mA IC, 100MHz fT, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features 65V collector-emitter breakdown voltage and 100mA maximum collector current. Operates with a 600mV collector-emitter saturation voltage and a 100MHz transition frequency. This component is RoHS compliant, halogen-free, and supplied on a 3000-piece tape and reel. Designed for automotive applications with AEC-Q101 qualification.
RoHS Compliant
Width 2.64mm
Height 1.11mm
Length 3.04mm
Series Automotive, AEC-Q101
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Max Frequency 100MHz
RoHS Compliant Yes
Package Quantity 3000
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 65V
Max Collector Current 100mA
Max Power Dissipation 300mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 65V
Collector Emitter Breakdown Voltage 65V
Collector Emitter Saturation Voltage 600mV

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