SBC847CDW1T1G

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SBC847CDW1T1G - Onsemi
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Краткое описание: Dual NPN BJT, 45V, 100mA, 100MHz, SOT-363
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual NPN Bipolar Junction Transistor (BJT) in a SOT-363 package, designed for surface mount applications. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Operates with a maximum collector-emitter saturation voltage of 600mV and a transition frequency of 100MHz. This component is halogen-free, lead-free, and RoHS compliant, supplied on a 3000-piece tape and reel.
RoHS Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-363
Max Frequency 100MHz
RoHS Compliant Yes
Package Quantity 3000
Radiation Hardening No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 380mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

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