SCT2160KEC
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Краткое описание:
SiC MOSFET N-Ch 1200V 22A 208mR TO-247
Дополнительная информация
N-Channel Silicon Carbide MOSFET, TO-247 package, offering 1200V drain-source voltage and 22A continuous drain current. Features low 160mΩ drain-source on-resistance and 1.2nF input capacitance. Designed for through-hole mounting with a maximum operating temperature of 175°C and 165W power dissipation. Includes fast switching characteristics with turn-on delay of 23ns and fall time of 27ns. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 20.95mm |
| Height | 5.03mm |
| Length | 15.9mm |
| Series | SCT2160KE |
| Polarity | N-CHANNEL |
| Fall Time | 27ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 208mR |
| Nominal Vgs | 4V |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Package Quantity | 360 |
| Input Capacitance | 1.2nF |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 23ns |
| Turn-Off Delay Time | 67ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 165W |
| Max Operating Temperature | 175°C |
| Drain to Source Resistance | 160mR |
| Gate to Source Voltage (Vgs) | 4V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drain-source On Resistance-Max | 160mR |
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