SCT2280KEC
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Краткое описание:
SiC MOSFET 1200V 14A N-Channel TO-247 280mR
Дополнительная информация
N-Channel Silicon Carbide MOSFET, 1200V Vdss, 14A continuous drain current, and 0.364 ohm Rds On Max. Features a TO-247 package for through-hole mounting, with a maximum power dissipation of 108W and an operating temperature range of -55°C to 175°C. Includes input capacitance of 667pF and fast switching times with a 29ns fall time. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 20.95mm |
| Height | 5.03mm |
| Length | 15.9mm |
| Series | SCT2280KE |
| Polarity | N-CHANNEL |
| Fall Time | 29ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 364mR |
| Nominal Vgs | 4V |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Package Quantity | 360 |
| Input Capacitance | 667pF |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 19ns |
| Turn-Off Delay Time | 47ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 108W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 22V |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drain-source On Resistance-Max | 280mR |
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