SCT3160KW7TL
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Краткое описание:
N-channel SiC Power MOSFET 1200V 17A TO-263-7L
Дополнительная информация
The SCT3160KW7TL is an N-channel Silicon Carbide (SiC) power MOSFET designed for high-efficiency power conversion. It features a trench-gate structure that provides low on-resistance and high switching speeds. The device is optimized for applications requiring fast reverse recovery and easy paralleling. It is housed in a surface-mount TO-263-7L package which includes a dedicated driver source pin to minimize inductance effects during switching.
| RoHS | Compliant |
| Lead Free | Pb-free lead plating |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 24ns |
| Power Dissipation (Pd) | 103W |
| Total Gate Charge (Qg) | 42nC |
| Gate-Source Voltage (Vgs) | -4 to +22V |
| Drain-Source Voltage (Vdss) | 1200V |
| Continuous Drain Current (Id) | 17A |
| Operating Junction Temperature | 175°C |
| Drain-Source On-Resistance (Rds On) | 160mOhms |
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