The SCZ4011KTAC23 is an automotive-grade (AEC-Q101 qualified) Silicon Carbide (SiC) MOSFET featuring a trench structure for low on-resistance and high-speed switching. It is designed for high-voltage applications such as on-board chargers (OBC), DC/DC converters, and EV powertrain inverters, offering superior thermal conductivity and reduced switching losses compared to traditional silicon solutions.
| RoHS |
Compliant |
| Automotive |
AEC-Q101 Qualified |
| Total Gate Charge (Qg) |
103nC |
| Gate-Source Voltage (Vgs) |
+21 / -4V |
| Drain-Source Voltage (Vdss) |
1200V |
| Continuous Drain Current (Id) |
40A |
| Operating Junction Temperature |
175°C |
| Static Drain-Source On-State Resistance (Typ) |
11mOhm |