SD1440-003L
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Краткое описание:
NPN Phototransistor, 30V VCEO, 3mA Ic, 935nm, Metal Can, Through Hole
Дополнительная информация
General purpose NPN phototransistor featuring a glass-lensed, metal can package for through-hole mounting. Offers a 30V collector-emitter breakdown voltage and a maximum collector current of 3mA. Operates across a wide temperature range from -55°C to 125°C with a 75mW power dissipation. This single-channel optical sensor detects wavelengths up to 935nm with a 24° viewing angle.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 3.1mm |
| Length | 2.41mm |
| Diameter | 1.57mm |
| Polarity | NPN |
| Fall Time | 15000ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Wavelength | 935nm |
| Orientation | Top View |
| Package/Case | Metal |
| Viewing Angle | 24° |
| Output Current | 3mA |
| RoHS Compliant | No |
| DC Rated Voltage | 5V |
| Power Consumption | 75mW |
| Power Dissipation | 75mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Collector Current | 3mA |
| Max Power Dissipation | 75mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Reverse Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
