SD2440-001
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NPN Phototransistor, 30V, 125mW, Through Hole, -55°C to 125°C
Дополнительная информация
The SD2440-001 is a NPN phototransistor with a collector emitter breakdown voltage of 30V and a collector emitter saturation voltage of 400mV. It has a maximum power dissipation of 125mW and operates within a temperature range of -55°C to 125°C. The device is available in a through hole package and is suitable for use in various applications.
| RoHS | Not Compliant |
| Mount | Through Hole, PCB, Panel |
| Polarity | NPN |
| Fall Time | 15000ns |
| Packaging | Bulk |
| Wavelength | 880nm |
| Orientation | Top View |
| Viewing Angle | 48° |
| RoHS Compliant | No |
| Power Dissipation | 125mW |
| Number of Elements | 1 |
| Max Power Dissipation | 125mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Reverse Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
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