SD3443-002
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Краткое описание:
NPN Phototransistor, 30V VCEO, 880nm, TO-46, Through Hole
Дополнительная информация
Silicon NPN phototransistor chip in a 3-pin TO-46 package, featuring a 30V collector-emitter breakdown voltage and 400mV collector-emitter saturation voltage. This through-hole mount component operates across a -55°C to 125°C temperature range with a 150mW maximum power dissipation. It offers a 90° viewing angle and a peak sensitivity wavelength of 880nm, with a fall time of 15000ns.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Width | 5.56mm |
| Height | 3.89mm |
| Length | 5.56mm |
| Polarity | NPN |
| Fall Time | 15000ns |
| Packaging | Bulk |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | TO-46-3 |
| Viewing Angle | 90° |
| RoHS Compliant | No |
| Package Material | SILICON |
| Power Consumption | 150mW |
| Power Dissipation | 150mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
