SD5443-003
Снят с производства
Краткое описание:
NPN Phototransistor, 880nm, 30V, 8mA, TO-46
Дополнительная информация
NPN phototransistor with silicon chip, TO-46 package, and 3-pin through-hole mount. Features 30V collector-emitter breakdown voltage, 400mV collector-emitter saturation voltage, and 8mA maximum collector current. Operates across a -55°C to 125°C temperature range with 150mW power dissipation. Emits at 880nm wavelength with an 18° viewing angle and a 15µs fall time.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Width | 5.56mm |
| Height | 3.89mm |
| Length | 5.56mm |
| Polarity | NPN |
| Fall Time | 15us |
| Packaging | Bulk |
| Lead Pitch | 2.54mm |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | TO-46 |
| Viewing Angle | 18° |
| RoHS Compliant | No |
| DC Rated Voltage | 5V |
| Package Material | SILICON |
| Power Consumption | 150mW |
| Power Dissipation | 150mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 8mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
