SD5443-004
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Краткое описание:
NPN Phototransistor, 30V VCEO, 880nm, TO-46
Дополнительная информация
Silicon NPN phototransistor, TO-46 package, featuring a 30V collector-emitter breakdown voltage and a 400mV collector-emitter saturation voltage. This top-view, through-hole mount component operates with a maximum collector current of 16mA and a power dissipation of 150mW. It exhibits a 15µs fall time and a 18° viewing angle, with an operating temperature range from -55°C to 125°C. The device is sensitive to 880nm infrared radiation.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Height | 6.27mm |
| Length | 17.77mm |
| Diameter | 4.06mm |
| Polarity | NPN |
| Fall Time | 15us |
| Packaging | Bulk |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | TO-46 |
| Viewing Angle | 18° |
| RoHS Compliant | No |
| Power Consumption | 150mW |
| Power Dissipation | 150mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 16mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
