SD5491-004
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NPN Phototransistor, 935nm IR, 30V VCEO, TO-18
Дополнительная информация
Silicon NPN phototransistor with a 935nm peak sensitivity, housed in a 3-pin TO-18 package. Features a 30V collector-emitter breakdown voltage and a maximum collector current of 4mA. Operates across a wide temperature range from -55°C to 125°C, with a power dissipation of 150mW. This through-hole mount component offers a narrow 12° viewing angle and a 2µs fall time.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Height | 5.08mm |
| Length | 17.77mm |
| Diameter | 4.06mm |
| Polarity | NPN |
| Fall Time | 2us |
| Packaging | Bulk |
| Wavelength | 935nm |
| Orientation | Top View |
| Package/Case | TO-18 |
| Viewing Angle | 12° |
| Output Current | 8mA |
| RoHS Compliant | No |
| Power Dissipation | 150mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Collector Current | 4mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
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