SD57030-01
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Краткое описание:
30W 65V 1GHz RF LDMOS Transistor, N-CH, 4A, 15dB
Дополнительная информация
N-Channel LDMOS Transistor, 30W output power at 28V, operating from HF up to 1GHz. Features 65V drain-to-source breakdown voltage and 15dB gain. Designed for surface mount in a flangeless package, with a maximum operating temperature of 200°C. RoHS compliant and lead-free.
| Gain | 15dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Frequency | 945MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Output Power | 30W |
| Package/Case | M |
| Test Voltage | 28V |
| Max Frequency | 1GHz |
| RoHS Compliant | Yes |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| Max Output Power | 30W |
| Package Quantity | 25 |
| Input Capacitance | 58pF |
| Power Dissipation | 74W |
| Number of Elements | 1 |
| Max Power Dissipation | 74W |
| DS Breakdown Voltage-Min | 65V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 65V |
| Drain to Source Breakdown Voltage | 65V |
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