SDP8106-001
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Краткое описание:
NPN Phototransistor, 15V VCEO, 935nm, Radial, Through Hole
Дополнительная информация
General purpose NPN phototransistor featuring a plastic radial package for through-hole mounting. Offers a collector-emitter breakdown voltage of 15V and a maximum power dissipation of 100mW. Operates within a temperature range of -40°C to 85°C with a viewing angle of 50° and a peak sensitivity wavelength of 935nm.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Height | 5.71mm |
| Polarity | NPN |
| Fall Time | 75000ns |
| Packaging | Bulk |
| Wavelength | 935nm |
| Orientation | Side View |
| Package/Case | Radial |
| Viewing Angle | 50° |
| RoHS Compliant | No |
| Package Quantity | 1 |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 15V |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 1.1V |
