SDP8406-002
Снят с производства
Увеличить
Краткое описание:
NPN Phototransistor, 30V VCEO, 935nm, Radial, Through Hole
Дополнительная информация
General purpose NPN phototransistor with radial package, through-hole mounting, and side-view orientation. Features a 30V collector-emitter voltage, 3.6mA maximum collector current, and 100mW maximum power dissipation. Operates across a temperature range of -40°C to 85°C with a 935nm wavelength sensitivity and a 50° viewing angle. Fall time is 15000ns.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Width | 2.28mm |
| Height | 5.72mm |
| Length | 4.45mm |
| Polarity | NPN |
| Fall Time | 15000ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Wavelength | 935nm |
| Orientation | Side View |
| Package/Case | Radial |
| Viewing Angle | 50° |
| Output Current | 3.6mA |
| RoHS Compliant | No |
| Package Material | Plastic |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 3.6mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
