SDP8406-003

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SDP8406-003 - Honeywell(Microelectronics & Precision Sensors)
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Краткое описание: NPN Phototransistor, 30V VCEO, 935nm, Radial, Through Hole
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN phototransistor with a radial plastic package, designed for through-hole mounting. Features a maximum collector emitter voltage (VCEO) of 30V and a maximum collector current of 6.5mA. Operates across a temperature range of -40°C to 85°C with a power dissipation of 100mW. This single-channel optical sensor has a viewing angle of 50° and a peak sensitivity wavelength of 935nm. Dimensions are 5.72mm height, 4.45mm length, and 2.28mm width.
RoHS Not CompliantNo
Mount Through Hole
Width 2.28mm
Height 5.72mm
Length 4.45mm
Polarity NPN
Fall Time 15000ns
Packaging Bulk
Wavelength 935nm
Orientation Side View
Package/Case Radial
Viewing Angle 50°
Output Current 6.5mA
RoHS Compliant No
DC Rated Voltage 5V
Power Consumption 100mW
Power Dissipation 100mW
Number of Channels 1
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Unknown
Max Collector Current 6.5mA
Max Power Dissipation 100mW
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 30V
Collector Emitter Voltage (VCEO) 30V