SDP8475-201
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NPN Phototransistor, 30V, 935nm, Through Hole
Дополнительная информация
NPN phototransistor with 30V collector-emitter breakdown voltage and 400mV collector-emitter saturation voltage. Features an 850nm wavelength, 20° viewing angle, and transparent lens. Through-hole mount package with 70mW maximum power dissipation. Operates between -40°C and 85°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.94mm |
| Height | 6.35mm |
| Length | 3.94mm |
| Polarity | NPN |
| Fall Time | 15000ns |
| Packaging | Bulk |
| Lens Style | TRANSPARENT |
| Wavelength | 935nm |
| Orientation | Top View |
| Package/Case | T |
| Viewing Angle | 20° |
| RoHS Compliant | Yes |
| Power Consumption | 70mW |
| Power Dissipation | 70mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
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