SDP8476-201
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Краткое описание:
NPN Phototransistor, 935nm, 30V, 6mA, Through Hole
Дополнительная информация
NPN phototransistor with 30V collector-emitter breakdown voltage and 6mA maximum collector current. Features a 935nm wavelength sensitivity, 20° viewing angle, and 100mW power dissipation. Operates within a -40°C to 85°C temperature range. Packaged in bulk for through-hole mounting, this RoHS compliant component offers a 15000ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.94mm |
| Height | 6.35mm |
| Length | 3.18mm |
| Polarity | NPN |
| Fall Time | 15000ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Wavelength | 935nm |
| Orientation | Side View |
| Package/Case | T |
| Viewing Angle | 20° |
| Output Current | 6mA |
| RoHS Compliant | Yes |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Max Collector Current | 6mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
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