SFH 300
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Краткое описание:
NPN Phototransistor 35V 50mA 880nm Radial Through Hole
Дополнительная информация
Silicon NPN phototransistor for optical sensing applications. Features an 880nm wavelength sensitivity and a 35V collector-emitter breakdown voltage. This through-hole component offers a 50° viewing angle and a maximum collector current of 50mA. Operating temperature range spans from -40°C to 100°C, with a power dissipation of 200mW. Packaged in bulk, this RoHS compliant component is ideal for various electronic designs.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.9mm |
| Height | 9mm |
| Length | 5.9mm |
| Polarity | NPN |
| Fall Time | 10us |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | Radial |
| Viewing Angle | 50° |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 200mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
