NPN phototransistor chip with a peak wavelength of 870 nm, designed for top-view sensing. This 2-pin SMD component features a domed lens, a half-intensity angle of 26°, and a maximum light current of 800 µA. Operating within a temperature range of -25°C to 85°C, it offers a maximum collector-emitter voltage of 30V and a maximum collector current of 15 mA, with a maximum dark current of 50 nA. Fabrication utilizes NPN transistor technology, and the device has a maximum collector-emitter saturation voltage of 0.17V.
| RoHS |
Yes |
| Type |
Chip |
| Polarity |
NPN |
| Pin Count |
2 |
| Package/Case |
SMD |
| RoHS Version |
2011/65/EU, 2015/863 |
| Lens Shape Type |
Domed |
| Peak Wavelength |
870nm |
| Maximum Fall Time |
7000ns |
| Maximum Rise Time |
7000ns |
| Package Family Name |
SMD |
| Viewing Orientation |
Top View |
| Maximum Dark Current |
50nA |
| Phototransistor Type |
Phototransistor |
| Maximum Light Current |
800uA |
| Fabrication Technology |
NPN Transistor |
| Max Operating Temperature |
85°C |
| Maximum Collector Current |
15mA |
| Min Operating Temperature |
-25°C |
| Number of Channels per Chip |
1 |
| Half Intensity Angle Degrees |
26° |
| Maximum Collector-Emitter Voltage |
30V |
| Maximum Emitter-Collector Voltage |
7V |
| Maximum Collector-Emitter Saturation Voltage |
0.17V |