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NPN Phototransistor, 850nm, 35V, 50mA, Radial
Дополнительная информация
NPN phototransistor for optical sensing applications. Features a 35V collector-emitter breakdown voltage and 50mA maximum collector current. Operates within a -40°C to 80°C temperature range with 70mW power dissipation. This radial-packaged component offers a 32° viewing angle and 850nm wavelength sensitivity. Through-hole mounting and RoHS compliance are standard.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 1.15mm |
| Height | 3.6mm |
| Length | 2.1mm |
| Polarity | NPN |
| Fall Time | 6us |
| Packaging | Bulk |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | Radial |
| Viewing Angle | 32° |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 70mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 70mW |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 32V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Saturation Voltage | 150mV |
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