SFH 3100 F
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Краткое описание:
NPN Phototransistor, 920nm, 35V VCEO, Radial, Through Hole
Дополнительная информация
NPN phototransistor for optical sensing, featuring a 920nm silicon chip with a 28° viewing angle. This through-hole component offers a maximum collector current of 50mA and a collector-emitter breakdown voltage of 35V. Operating within a -40°C to 85°C temperature range, it has a power dissipation of 150mW and a fall time of 9µs. The radial package is black with a domed lens.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.2mm |
| Height | 4.1mm |
| Length | 3.1mm |
| Polarity | NPN |
| Fall Time | 9us |
| Packaging | Bulk |
| Lens Color | Black |
| Lens Style | Domed |
| Wavelength | 920nm |
| Orientation | Side View |
| Package/Case | Radial |
| Viewing Angle | 28° |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Power Dissipation | 150mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Collector Current | 50mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Saturation Voltage | 140mV |
