SFH 314 FA-2/3
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NPN Phototransistor, 870nm IR, 70V VCEO, 50mA IC, Through Hole
Дополнительная информация
NPN phototransistor for optical sensing applications. Features an 870nm silicon chip with a 70V collector-emitter breakdown voltage and a maximum collector current of 50mA. This through-hole component offers a 200mW power dissipation and operates within a -40°C to 100°C temperature range. The 2-pin T-1 3/4 radial package provides a wide 80° viewing angle.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.9mm |
| Height | 6.9mm |
| Length | 5.9mm |
| Polarity | NPN |
| Fall Time | 12us |
| Packaging | Bulk |
| Wavelength | 870nm |
| Orientation | Top View |
| Package/Case | Radial |
| Viewing Angle | 80° |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 200mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 70V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 70V |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 150mV |
