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NPN Phototransistor, 35V VCEO, 860nm, Domed Lens, Through Hole
Дополнительная информация
NPN phototransistor with a 35V collector-emitter breakdown voltage, designed for through-hole mounting. Features a 15mA maximum collector current and a 200mV collector-emitter saturation voltage. Operates within a temperature range of -40°C to 100°C, with a maximum power dissipation of 165mW. This component utilizes a domed lens style, offers a 24° viewing angle, and has a wavelength sensitivity of 860nm. Packaged in bulk for convenience.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4mm |
| Height | 5.2mm |
| Length | 4mm |
| Polarity | NPN |
| Fall Time | 8000ns |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 860nm |
| Orientation | Top View |
| Package/Case | T |
| Viewing Angle | 24° |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Power Dissipation | 165mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 15mA |
| Max Power Dissipation | 165mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Saturation Voltage | 200mV |
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