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Краткое описание:
NPN Phototransistor 860nm 35V 15mA T-1 Through Hole
Дополнительная информация
Silicon NPN phototransistor chip for optical sensing applications. Features a 35V collector-emitter breakdown voltage and a maximum collector current of 15mA. Operates within a temperature range of -40°C to 100°C with a power dissipation of 165mW. This through-hole component has a T-1 package with a domed lens, a 24° viewing angle, and a 9µs fall time, sensitive to 860nm wavelengths.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4mm |
| Height | 5.2mm |
| Length | 4mm |
| Polarity | NPN |
| Fall Time | 9us |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 860nm |
| Orientation | Top View |
| Package/Case | T |
| Viewing Angle | 24° |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Power Dissipation | 165mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 15mA |
| Max Power Dissipation | 165mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Saturation Voltage | 200mV |
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