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NPN Phototransistor, 35V VCEO, 880nm, 50mA, Radial
Дополнительная информация
NPN phototransistor with a 35V collector-emitter voltage and 50mA maximum collector current. Features a 880nm wavelength, 50° viewing angle, and a domed lens style. Operates within a -40 to 100 °C temperature range, with a power dissipation of 165mW. Packaged in a radial, through-hole mount configuration with dimensions of 3.3 x 3.3 x 4.6 mm. This RoHS compliant component offers a fall time of 8µs.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.4mm |
| Height | 4.8mm |
| Length | 3.4mm |
| Polarity | NPN |
| Fall Time | 8us |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | Radial |
| Viewing Angle | 50° |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Power Dissipation | 165mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Collector Current | 50mA |
| Max Power Dissipation | 165mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 150mV |
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