Phototransistor IR Chip Silicon 870nm 2-Pin T-1 3/4
| RoHS |
Yes |
| Type |
IR Chip |
| Polarity |
NPN |
| Pin Count |
2 |
| Package/Case |
T-1 3/4 |
| RoHS Version |
2011/65/EU, 2015/863 |
| Lens Shape Type |
Domed |
| Peak Wavelength |
870nm |
| Maximum Fall Time |
10000/12000ns |
| Maximum Rise Time |
10000/12000ns |
| Package Family Name |
T-1 3/4 |
| Viewing Orientation |
Top View |
| Maximum Dark Current |
200nA |
| Phototransistor Type |
Phototransistor |
| Maximum Light Current |
8000/12500uA |
| Fabrication Technology |
NPN Transistor |
| Max Operating Temperature |
100°C |
| Maximum Collector Current |
50mA |
| Maximum Power Dissipation |
200mW |
| Min Operating Temperature |
-40°C |
| Number of Channels per Chip |
1 |
| Half Intensity Angle Degrees |
20° |
| Maximum Collector-Emitter Voltage |
70V |
| Maximum Emitter-Collector Voltage |
7V |
| Maximum Collector-Emitter Saturation Voltage |
0.15V |