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NPN Phototransistor, 70V, 50mA, 870nm, Through Hole
Дополнительная информация
NPN phototransistor for optical sensing applications. Features a 70V collector-emitter breakdown voltage and a maximum collector current of 50mA. This through-hole component utilizes an 870nm wavelength with a 20° viewing angle and a domed lens style. Operates within a temperature range of -40°C to 100°C, with a power dissipation of 200mW. Packaged in a 2-pin, 5mm (T-1 3/4) radial package.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.9mm |
| Height | 9mm |
| Length | 5.9mm |
| Polarity | NPN |
| Fall Time | 14us |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 870nm |
| Orientation | Top View |
| Package/Case | Radial |
| Viewing Angle | 20° |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 200mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 70V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 70V |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 150mV |
