SGF5N150UFTU
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Краткое описание:
IGBT 1.5kV 10A 62.5W SOIC
Дополнительная информация
The SGF5N150UFTU is a 1.5kV insulated gate bipolar transistor with a maximum collector current of 10A and a maximum power dissipation of 62.5W. It is packaged in a SOIC package and is suitable for through-hole mounting. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is compliant with RoHS regulations and is lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 6.962g |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Package/Case | SOIC |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 1.5kV |
| Package Quantity | 30 |
| Power Dissipation | 62.5W |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Collector Current | 10A |
| Max Power Dissipation | 62.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 5.5V |
| Collector Emitter Voltage (VCEO) | 1.5kV |
| Collector Emitter Breakdown Voltage | 1.5kV |
| Collector Emitter Saturation Voltage | 4.7V |
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