SI1012CR-T1-GE3
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Краткое описание:
N-Channel JFET, 20V, 630mA, 396mR Rds(on), Surface Mount
Дополнительная информация
N-channel, small-signal, general-purpose JFET transistor designed for surface mount applications. Features a 20V drain-source voltage (Vdss) and a maximum continuous drain current (ID) of 630mA. Offers a low drain-source on-resistance (Rds On) of 330mR, with a maximum of 396mR. Includes fast switching characteristics with a 11ns turn-on delay and 11ns fall time. Operates within a temperature range of -55°C to 150°C and is housed in a compact SC-75A package. This component is RoHS compliant and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.86mm |
| Height | 0.8mm |
| Length | 1.68mm |
| Series | TrenchFET® |
| Weight | 7.1E-05oz |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 396mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 43pF |
| Threshold Voltage | 400mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 240mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 330mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 630mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 396mR |
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