SI1012R-T1-GE3
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N-Channel JFET, 20V, 500mA, 700mR RdsOn, SOT-416
Дополнительная информация
N-channel, general-purpose small signal MOSFET with a 20V drain-source voltage and 500mA continuous drain current. Features a low 700mΩ drain-source on-resistance and fast switching times with 5ns turn-on and 25ns turn-off delays. Housed in a compact 3-pin SC-75A (SOT-416) surface-mount package, this component operates from -55°C to 150°C with a maximum power dissipation of 150mW. It is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.76mm |
| Height | 0.7mm |
| Length | 1.58mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 700mR |
| Package/Case | SOT-416 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 150mW |
| Threshold Voltage | 900mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5ns |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 700mR |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 700MR |
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