SI1012X-T1-GE3
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Краткое описание:
N-Channel JFET, 20V, 500mA, 700mR Rds(on), SC-89
Дополнительная информация
N-channel, small-signal JFET transistor for general-purpose applications. Features 20V drain-source voltage, 500mA continuous drain current, and 700mΩ maximum drain-source on-resistance. Operates from -55°C to 150°C with 250mW maximum power dissipation. Packaged in a 3-pin SC-89 surface-mount case, this device offers fast switching with 5ns turn-on and fall times. RoHS and halogen-free compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.95mm |
| Height | 0.8mm |
| Length | 1.7mm |
| Series | TrenchFET® |
| Weight | 0.001058oz |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 700mR |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 250mW |
| Threshold Voltage | 900mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 700mR |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 700mR |
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