SI1013CX-T1-GE3
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Краткое описание:
P-CHANNEL TrenchFET MOSFET 20V 450mA 190mW SOT-563-3
Дополнительная информация
The SI1013CX-T1-GE3 is a P-channel TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 190mW and a continuous drain current of 450mA. The device is packaged in a SOT-563-3 package and is mounted using a surface mount process. The MOSFET has a drain to source voltage of 20V and a drain to source resistance of 630mR. It also features a gate to source voltage of 8V and an input capacitance of 45pF.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 5ns |
| Packaging | Tape and Reel |
| Rds On Max | 760mR |
| Package/Case | SOT-563-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 45pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 1ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9ns |
| Max Power Dissipation | 190mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 630mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 450mA |
| Drain to Source Voltage (Vdss) | 20V |
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