SI1013R-T1-E3
Снят с производства
Увеличить
Краткое описание:
P-Channel JFET, 20V, 350mA ID, 1.2R RDS(on), SOT-416
Дополнительная информация
P-channel JFET for small signal applications, featuring a 20V drain-source breakdown voltage and 350mA continuous drain current. This surface-mount transistor offers a maximum drain-source on-resistance of 1.2 Ohms. Operating across a temperature range of -55°C to 150°C, it boasts fast switching speeds with a 5ns turn-on delay and 9ns fall time. The component is housed in a compact SOT-416 package and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.76mm |
| Height | 0.7mm |
| Length | 1.58mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.2R |
| Package/Case | SOT-416 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 350mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1.2R |
| Drain to Source Breakdown Voltage | -20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
