SI1013R-T1-GE3
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P-Channel JFET, 350mA, -20V, 1.2R, SOT-416
Дополнительная информация
P-channel, small-signal MOSFET for general-purpose applications. Features a continuous drain current of 350mA and a drain-to-source breakdown voltage of -20V. Offers a low drain-source on-resistance of 1.2 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW. Packaged in a compact SOT-416 (SC-75A) surface-mount case.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.76mm |
| Height | 0.7mm |
| Length | 1.58mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.2R |
| Package/Case | SOT-416 |
| Polarization | P |
| Package Quantity | 1 |
| Power Dissipation | 150mW |
| Threshold Voltage | -450mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 350mA |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 1.2R |
| Drain to Source Breakdown Voltage | -20V |
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