SI1013X-T1-E3
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Краткое описание:
P-Channel MOSFET, 20V, 350mA, 1.2Ω, SOT-23
Дополнительная информация
P-channel MOSFET transistor featuring a 20V drain-source breakdown voltage and 1.2Ω maximum drain-source on-resistance. Designed for surface mount applications, this component offers a continuous drain current of 350mA and a maximum power dissipation of 250mW. Operating across a wide temperature range from -55°C to 150°C, it exhibits fast switching characteristics with a 5ns turn-on delay and 11ns fall time.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 0.037inch |
| Height | 0.031inch |
| Length | 0.066inch |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.2R |
| RoHS Compliant | No |
| Package Quantity | 3000 |
| Power Dissipation | 250mW |
| Turn-On Delay Time | 5ns |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 350mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1.2R |
| Drain to Source Breakdown Voltage | 20V |
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