SI1013X-T1-GE3
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Краткое описание:
P-CH JFET, 20V, 350mA, 1.2 Ohm, SC Package, Surface Mount
Дополнительная информация
P-channel JFET for general-purpose small signal applications. Features a continuous drain current of 350mA and a drain-to-source voltage of -20V. Offers a low drain-source on-resistance of 1.2 Ohms. Operates across a wide temperature range from -55°C to 150°C. Packaged in a compact SC-89 surface-mount case, this component is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.95mm |
| Height | 0.8mm |
| Length | 1.7mm |
| Series | TrenchFET® |
| Weight | 0.001058oz |
| Polarity | P-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.2R |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | -450mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 350mA |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 1.2R |
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