SI1016X-T1-GE3
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2-Ch N/P-Ch JFET, 20V, 370mA, 700mR, SOT-563
Дополнительная информация
Dual-channel N-channel and P-channel JFET for general-purpose small signal applications. Features a 20V drain-source voltage and 370mA continuous drain current. Offers a maximum drain-source on-resistance of 700mΩ. Packaged in a compact SOT-563 surface-mount case, this component operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Series | TrenchFET® |
| Weight | 0.001129oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 700mR |
| Package/Case | SOT-563 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 250mW |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 800mR |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 370mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 700mR |
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